SCT025W120G3-4AG Power MOSFET: Full Specifications and Features
The SCT025W120G3-4AG is a power MOSFET designed for high-performance applications that demand high efficiency, fast switching, and low power losses. It is part of the Silicon Carbide (SiC) MOSFET family, which offers significant advantages over traditional silicon-based MOSFETs, particularly in terms of thermal efficiency, switching speed, and overall power handling. In this article, we will break down the key specifications and features of the SCT025W120G3-4AG Power MOSFET, giving you a comprehensive understanding of why it is a top choice for various industrial and commercial applications. Key Specifications Here are the detailed specifications for the SCT025W120G3-4AG Power MOSFET: Technology : Silicon Carbide (SiC) Maximum Drain-Source Voltage (Vds) : 1200V Maximum Continuous Drain Current (Id) : 32A (at 25°C) Maximum Power Dissipation (Pd) : 100W Rds(on) : 25 mΩ (at 25°C) Gate Threshold Voltage (Vgs(th)) : 4V to 5.5V Operating Temperature Range : -55°C to +175°C Total Gate ...