SCT025W120G3-4AG Power MOSFET: Full Specifications and Features

 The SCT025W120G3-4AG is a power MOSFET designed for high-performance applications that demand high efficiency, fast switching, and low power losses. It is part of the Silicon Carbide (SiC) MOSFET family, which offers significant advantages over traditional silicon-based MOSFETs, particularly in terms of thermal efficiency, switching speed, and overall power handling.

In this article, we will break down the key specifications and features of the SCT025W120G3-4AG Power MOSFET, giving you a comprehensive understanding of why it is a top choice for various industrial and commercial applications.

Key Specifications

Here are the detailed specifications for the SCT025W120G3-4AG Power MOSFET:

  • Technology: Silicon Carbide (SiC)
  • Maximum Drain-Source Voltage (Vds): 1200V
  • Maximum Continuous Drain Current (Id): 32A (at 25°C)
  • Maximum Power Dissipation (Pd): 100W
  • Rds(on): 25 mΩ (at 25°C)
  • Gate Threshold Voltage (Vgs(th)): 4V to 5.5V
  • Operating Temperature Range: -55°C to +175°C
  • Total Gate Charge (Qg): 44 nC (typical)
  • Input Capacitance (Ciss): 1750 pF (typical)
  • Rise/Fall Time: Fast switching times (typically under 30 ns)
  • Package: TO-247-4L

Main Features

1. High Voltage Capability

The SCT025W120G3-4AG can handle drain-source voltages of up to 1200V, making it suitable for high-voltage applications such as power supplies, inverters, and motor drives. This high voltage capacity ensures that the MOSFET can efficiently manage large power loads without risk of failure.

2. Low Rds(on)

One of the standout features of this MOSFET is its low Rds(on) of just 25 mΩ. This characteristic leads to minimal conduction losses, significantly improving efficiency in power systems. The low on-resistance also helps reduce heat generation, making it an ideal choice for applications where thermal management is critical.

3. Fast Switching Speeds

Silicon Carbide technology enables this MOSFET to achieve fast switching times, with rise and fall times typically under 30 nanoseconds. Faster switching not only improves efficiency but also reduces the size of passive components in power circuits, enabling more compact designs.

4. High Operating Temperature

The SCT025W120G3-4AG can operate in extreme conditions, with a maximum operating temperature of 175°C. This high-temperature tolerance allows it to be used in harsh environments, such as automotive and industrial applications, where other MOSFETs might fail.

5. Low Gate Charge

With a total gate charge (Qg) of just 44 nC, this MOSFET is easy to drive, requiring lower power for gate switching. The low gate charge also contributes to the fast switching speeds, ensuring minimal switching losses.

6. Improved Thermal Efficiency

Silicon Carbide MOSFETs, including the SCT025W120G3-4AG, are known for their superior thermal performance. With better heat dissipation and lower thermal resistance, they maintain efficiency under heavy loads, reducing the need for extensive cooling systems.

Applications

Given its high performance, the SCT025W120G3-4AG Power MOSFET is ideal for a variety of demanding applications, including:

1. Industrial Power Supplies

The high voltage and low power loss characteristics make this MOSFET suitable for industrial power supplies that require efficient and reliable performance.

2. Electric Vehicles (EVs)

Due to its high efficiency and thermal management capabilities, this SiC MOSFET is widely used in electric vehicle powertrain systems, including motor control and battery management systems.

3. Renewable Energy Systems

In applications such as solar inverters and wind turbine systems, the SCT025W120G3-4AG can handle high power levels while maintaining efficiency, making it an excellent choice for energy conversion.

4. Motor Drives

This MOSFET’s fast switching and low losses make it ideal for motor control systems, improving the performance of motors used in industrial and commercial settings.

5. Power Inverters

In high-frequency power inverters, the SCT025W120G3-4AG ensures smooth and efficient power conversion, helping to reduce losses and improve overall system efficiency.

Advantages of Silicon Carbide (SiC) Technology

The Silicon Carbide (SiC) technology used in the SCT025W120G3-4AG brings several advantages over traditional silicon-based MOSFETs:

  • Higher Efficiency: SiC MOSFETs have lower switching and conduction losses, significantly improving overall efficiency.
  • Higher Temperature Operation: SiC devices can operate at higher temperatures, making them suitable for harsh environments.
  • Faster Switching: SiC technology enables much faster switching speeds, which helps reduce system size and improve power density.
  • Improved Thermal Management: SiC MOSFETs exhibit better heat dissipation, reducing the need for large cooling systems.

Conclusion

The SCT025W120G3-4AG Power MOSFET offers an excellent combination of high voltage capacity, low on-resistance, fast switching times, and robust thermal management, thanks to its Silicon Carbide technology. These features make it ideal for demanding applications such as electric vehicles, industrial power systems, renewable energy systems, and motor drives.

With its ability to handle high voltages and currents while maintaining high efficiency, the SCT025W120G3-4AG is a top choice for engineers and designers looking to optimize power management in advanced electronic systems.

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